Advanced Device Physics

Semiconductor device physics is fundamental to understanding the operation of today's integrated circuits. This course offers an in-depth look into how semiconductors operate at a fundamental level. This is a detailed course that will help the student understand the physics of semiconductor materials, and the equations used to describe the operation of pn junctions, bipolar junction transistors, and Metal Oxide Semiconductor (MOS) transistors. We also cover many of the non-ideal effects associated with these devices, such as parasitic resistance and capacitance, bipolar effects like the Early Effect and the Kirk Effect, as well as MOS transistor effects like channel length modulation, punch-through, and so forth.

This course is authored by Badih El-Kareh PhD, a 40-year industry veteran with work experience at IBM, Texas Instruments, and numerous other companies through his consulting firm PIYE. He is an award-winning developer of CMOS, BiCMOS, Bipolar and memory processes that are still in high volume production to this day.

Please note that this is part 1 of a two-part course. The second part will be available in early 2021. We will make the second part available to our early subscribers for no additional charge once it becomes available.

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Advanced Device Physics


1.1 Properties of the Silicon Crystal

1.2 Two-Carrier Concept and Doping

1.3 Distribution of Electrons and Holes in Silicon

1.4 The Conduction Process

1.5 Test Structures and Characterization

Quiz: Properties of the Silicon Crystal

2.1 Fabrication of a PN Junction

2.2 PN Junction at Thermal Equilibrium

2.3 PN Junction in Forward Bias

2.4 PN Junction in Reverse Bias

2.5 Characterization of PN Junctions

3.1 Rectifying Contacts, Schottky-Barrier Diode

3.2 SBD Characterization and Applications

3.3 Ohmic Contacts

4.1 Introduction to Bipolar Junction Transistors

4.2 Bipolar Junction Transistor DC Parameters

4.3 Graded Base and High Current and High-Level Injection

4.4 Frequency Response and Transistor Switching

4.5 Advanced Bipolar Transistors

4.6 Characterization of Bipolar Transistors

5.1 Junction Field-Effect Transistor

5.2 The MOS Structure

5.3 Surface Effects on PN Junctions

5.4 Introduction to MOSFETs

5.5 MOSFET Characteristics

5.6 Nonuniform Channels and Small Size MOSFET Effects

5.7 Advanced MOSFET Technologies

5.8 Complementary Metal Oxide Silicon FETs, CMOS

6.1 The Drain-Extended MOS Transistors, DEMOS

6.2 Integrated Laterally Double-Diffused MOS Transistors, LDMOS

6.3 The Reduced Surface-Field, RESURF

6.4 Power Transistors

7.1 Passive Components

7.2 Integrated Capacitor

7.3 Integrated Varactors and Inductors

8.1 Unit Processes and Process Integration

8.2 Oxidation and Nitridation of Silicon

8.3 Thin-Film Deposition

8.4 Lithography

8.5 Contamination Control and Etch

8.6 Ion Implantation

8.7 Diffusion

8.8 Contacts and Interconnect Technology

8.9 Process Integration


Advanced Device Physics Index